BFP196 E6327

BFP196 E6327 is a type of NPN silicon RF transistor which has many unique features: (1)For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA;(2)Power amplifier for DECT and PCN systems;(3)fT is 7.5GHz and F is 1.5 dB at 900MHz.

There are some maximum ratings of BFP196 E6327 about it.Collector-emitter voltage(VCEO) is 12 V.Collector-base voltage(VCBO) is 20 V.Emitter-base voltage(VEBO) is 2 V.Collector current(IC) is 100 mA.Base current(IB) is 12 mA.Total power dissipation(Ptot,TS is not higher than 75°C) is 700 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.

Besides,there are some electrical characteristics of BFP196 E6327 at TA = 25°C, unless otherwise specified.DC characteristics: Collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 12 V min.Collector-base cutoff current(ICBO,VEB = 0.5 V, Ic = 0) is 100 nA max.Emitter-base cutoff current(IEBO,VEB = 0.5 V, IC = 0) is 1A max.DC current gain(hFE,Ic is 50 mA , Vce is 8 V) is 50 min,100 typ and 200 max.