BFP193W E6327

BFP193W E6327 is a type of NPN silicon RF transistor which has three unique features: (1)for low noise,high-gain amplifiers up to 2GHz;(2)for linear broadband amplifiers;(3)fT is 8GHz and F is 1.3dB at 900MHz.

There are some maximum ratings of BFP193W E6327 about it.Collector-emitter voltage(VCEO) is 12 V.Collector-base voltage(VCBO) is 20 V.Emitter-base voltage(VEBO) is 2 V.Collector current(IC) is 80 mA.Base current(IB) is 10 mA.Total power dissipation(Ptot,TS is not higher than 75°C) is 580 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.

Besides,there are some electrical characteristics of BFP193W E6327 at TA = 25°C, unless otherwise specified.DC characteristics: Collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 12 V min.Collector-base cutoff current(ICBO,VCEB = 10 V, Ie = 0) is 100 nA max.Emitter-base cutoff current(IEBO,VEB = 1V, IC = 0) is 1A max.DC current gain(hFE,Ic is 30 mA , Vce is 8 V) is 50 min,100 typ and 200 max.