Features: ·For low noise, high-gain amplifiers up to 2 GHz· For linear broadband amplifiers· fT = 8 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage...
BFP193: Features: ·For low noise, high-gain amplifiers up to 2 GHz· For linear broadband amplifiers· fT = 8 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emi...
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·For low noise, high-gain amplifiers up to 2 GHz
· For linear broadband amplifiers
· fT = 8 GHz
F = 1.3 dB at 900 MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
80 |
mA |
Base current |
IB |
10 | |
Total power dissipation1) TS 72°C |
Ptot |
580 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point2) |
RthJS |
135 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance