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BFP182R

Features: · For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 8 GHz F = 1.2 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base ...

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BFP182R: Features: · For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 8 GHz F = 1.2 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collec...

BFP182R Data Sheet

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Part Number:
BFP182R
Supply Ability:
5000

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Product Details

Description



Features:

· For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
· fT = 8 GHz
    F = 1.2 dB at 900 MHz


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
mA
Base current
IB
4
Total power dissipation1)
TS 69°C
Ptot
250
W
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
325
K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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