Specifications BFN 22 Collector-Emitter-voltage B open -VCE0 250 V Collector-Base-voltage E open -VCB0 250 V Collector-Emitter-voltage RBE = 2.7 k -VCER 250 V Emitter-Base-voltage C open -VEB0 5 V Power dissipation Verlustleistung Ptot 250 mW ...
BFN 23: Specifications BFN 22 Collector-Emitter-voltage B open -VCE0 250 V Collector-Base-voltage E open -VCB0 250 V Collector-Emitter-voltage RBE = 2.7 k -VCER 250 V ...
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Transistors Switching (Resistor Biased) NPN Silicon Hi-Volt TRANSISTOR
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Transistors Switching (Resistor Biased) PNP Silicon Hi-Volt TRANSISTOR
BFN 22 | ||
Collector-Emitter-voltage B open |
-VCE0 |
250 V |
Collector-Base-voltage E open |
-VCB0 |
250 V |
Collector-Emitter-voltage RBE = 2.7 k |
-VCER |
250 V |
Emitter-Base-voltage C open |
-VEB0 |
5 V |
Power dissipation Verlustleistung |
Ptot |
250 mW 1) |
Collector current Kollektorstrom (dc) |
IC |
50 mA |
Peak Collector current Kollektor-Spitzenstrom |
ICM |
100 mA |
Junction temperature Sperrschichttemperatur |
Tj |
150 |
Storage temperature Lagerungstemperatur |
TS |
- 65.+ 150 |