Features: ·Suitable for video output stages in TV sets switching power supplies· High breakdown voltage·Low collector-emitter saturation voltage·Low capacitance·Complementary type: BFN 20 (NPN)Specifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V...
BFN 21: Features: ·Suitable for video output stages in TV sets switching power supplies· High breakdown voltage·Low collector-emitter saturation voltage·Low capacitance·Complementary type: BFN 20 (NPN)Speci...
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Transistors Switching (Resistor Biased) NPN Silicon Hi-Volt TRANSISTOR
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Transistors Switching (Resistor Biased) PNP Silicon Hi-Volt TRANSISTOR
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
300 |
V |
Collector-base voltage |
VCBO |
300 | |
Collector-emitter voltage, RBE = 2.7 kW |
VCER |
300 | |
Emitter-base voltage |
VEBO |
5 | |
Collector current |
IC |
50 |
mA |
Peak collector current |
ICM |
100 | |
Total power dissipation, TS =120 °C |
Ptot |
1 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Junction - ambient2) |
RthJA |
90 |
K/W |
Junction - soldering point1) |
RthJS |
30 |
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm * 40 mm * 1.5 mm/6 cm2 Cu.