BFM520 Selling Leads, Price trend, BFM520 DataSheet download, circuit diagram from SeekIC.com

Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Application· Oscillator and buffer amplifiers· Balanced amplifiers· LNA/mixers.PinoutSpecifications SYMBO...

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SeekIC No. : 004299701 Detail

BFM520: Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Applicatio...

BFM520 Data Sheet

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Part Number:: BFM520
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/21

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What is this?

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Product Details

Description

Features:

· Small size
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.

Application

· Oscillator and buffer amplifiers
· Balanced amplifiers
· LNA/mixers.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	8	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current		-	70	mA
P_tot	total power dissipation	up to T_s = 118 °C note 1	-	1	W
T_stg	storage temperature		-65	+175	°C
T_j	junction temperature		-	175	°C

Description

Dual transistor BFM520 with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.

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BFM520

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