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BFM520

Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Application· Oscillator and buffer amplifiers· Balanced amplifiers· LNA/mixers.PinoutSpecifications SYMBO...

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SeekIC No. : 004299701 Detail

BFM520: Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Applicatio...

BFM520 Data Sheet

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Part Number:
BFM520
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Small size
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.


Application

· Oscillator and buffer amplifiers
· Balanced amplifiers
· LNA/mixers.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current
-
70
mA
Ptot total power dissipation
up to Ts = 118 °C note 1
-
1
W
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C



Description

Dual transistor BFM520 with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.




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