Features: · High power gain· Low noise figure· Low intermodulation distortion· Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result...
BFG94: Features: · High power gain· Low noise figure· Low intermodulation distortion· Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support app...
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Transistors RF Bipolar Small Signal Single NPN 15V 25mA 400mW 65 5GHz
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
15 |
V |
VCEO | collector-emitter voltage |
open base |
- |
12 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
IC | collector current (DC) |
- |
60 |
mA | |
Ptot | total power dissipation |
up to Ts = 140 °C (note 1) |
- |
700 |
mW |
Tstg | storage temperature |
-65 |
150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector tab.
NPN transistor BFG94 mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems.