Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.Application·Wideband applications in the UHF and microwave range.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter ...
BFG93X: Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.Application·Wideband applications in the UHF and microwave range.PinoutSpecifications SYMBOL PA...
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Transistors RF Bipolar Small Signal Single NPN 15V 25mA 400mW 65 5GHz
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
15 |
v |
VCEO | collector-emitter voltage |
open base |
- |
12 |
v |
VEBO | emitter-base voltage |
open collector |
- |
2 |
v |
IC | collector currentDC |
- |
35 |
mA | |
Ptot | total power dissipation |
Ts = 85 °C; note 1 |
- |
300 |
mW |
Tstg | storage temperature |
-65 |
150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.