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BFG67/XR

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationWideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.PinoutSpecifications SYMBOL PARAMETER CONDITIO...

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SeekIC No. : 004299687 Detail

BFG67/XR: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationWideband applications in the GHz range, such as satellite TV tun...

BFG67/XR Data Sheet

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Part Number:
BFG67/XR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.


Application

Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.




Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
50
mA
Ptot total power dissipation
Ts  65 °C; note 3; note 1
-
380
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request.




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