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BFG67W/XR

Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThey are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.Pinout Specifications SYMBOL PARAMETE...

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SeekIC No. : 004299690 Detail

BFG67W/XR: Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThey are intended for wideband applications in the GHz range such as analog satellite telev...

BFG67W/XR Data Sheet

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Part Number:
BFG67W/XR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· High power gain
· Low noise figure
· Gold metallization ensures excellent reliability.


Application

They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.




Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
50
mA
Ptot total power dissipation
up to Ts = 85 °C; see Fig.3; note 1
-
500
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C



Description

NPN silicon planar epitaxial transistors BFG67W/XR in plastic, 4-pin dual-emitter SOT343 and SOT343R packages.


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