BFG67W Selling Leads, Price trend, BFG67W DataSheet download, circuit diagram from SeekIC.com

Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThey are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.Pinout Specifications SYMBOL PARAMETE...

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SeekIC No. : 004299688 Detail

BFG67W: Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThey are intended for wideband applications in the GHz range such as analog satellite telev...

BFG67W Data Sheet

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Part Number:: BFG67W
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/20

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Recent History
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BFG67 evaluate
Features: · Small feedback capacitance· Low noise figure· High transition frequencyApplicationLow ...
BFG67,215 evaluate
US $.22 - .34 / Piece

Transistors RF Bipolar Small Signal TAPE7 TNS-RFSS
BFG67/X evaluate
Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensur...

Product Details

Description

Features:

· High power gain
· Low noise figure
· Gold metallization ensures excellent reliability.

Application

They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	10	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	50	mA
P_tot	total power dissipation	up to T_s = 85 °C; see Fig.3; note 1	-	500	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Description

NPN silicon planar epitaxial transistors BFG67W in plastic, 4-pin dual-emitter SOT343 and SOT343R packages.

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BFG67W

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