BF659

The BF659 is a silicon planar expitaxial NPN transistors in jedec TO-39 metal case.

The absolute maximum ratings of the BF659 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage(IE=0),the value is 300,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage(IB=0),the value is 300,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage(IC=0),the value is 5,the unit is V;(4):the symbol is IC,the parameter is collector current,the value is 100,the unit is mA;(5):the symbol is ICM,the parameter is collector peak current,the value is 200,the unit is mA;(6):the symbol is Ptot,the parameter is total power dissipation at Tcase60,the value is 7,the unit is W;(7):the symbol is Ptot,the parameter is total power dissipation at Tcase140,the value is 3,the unit is W;(8):the symbol is Tstg,the parameter is storage temperature,the value is -55 to 200,the unit is ;(9):the symbol is TJ,the parameter is junction temperature,the value is 200,the unit is .