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BF556B

Features: • Low leakage level (typ. 500 fA)• High gain• Low cut-off voltage.Application• Impedance converters in e.g. electret microphones and infra-red detectors• VHF amplifiers in oscillators and mixers.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. ...

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BF556B: Features: • Low leakage level (typ. 500 fA)• High gain• Low cut-off voltage.Application• Impedance converters in e.g. electret microphones and infra-red detectors• VHF ...

BF556B Data Sheet

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Part Number:
BF556B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage.


Application

• Impedance converters in e.g. electret microphones and infra-red detectors
•  VHF amplifiers in oscillators and mixers.


Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC)   - ±30 V
VGSO gate-source voltage open drain - −30 V
VGDO gate-drain voltage (DC) open source - −30 V
IG forward gate current (DC)   - 10 mA
Ptot total power dissipation up to Tamb =25 ; note 1 - 250 mW
Tstg storage temperature   −65 150
Tj operating junction temperature   - 150
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.


Description

N-channel symmetrical silicon junction field-effect transistors BF556B in a SOT23 package.


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