ApplicationFor high-frequency stages up to 300 MHz preferably in FM applicationsIDSS = 4mA, gfs = 12mSPinoutSpecifications Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 Total power dissipation, TS 76 ...
BF543: ApplicationFor high-frequency stages up to 300 MHz preferably in FM applicationsIDSS = 4mA, gfs = 12mSPinoutSpecifications Parameter Symbol Values Unit Drain-source voltage VDS 20 V ...
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DescriptionThe BF543E7810 is one of the BF543 series.This is a silicon n channel mos fet triode. ...
Parameter | Symbol | Values | Unit |
Drain-source voltage | VDS | 20 | V |
Drain current | ID | 30 | mA |
Gate-source peak current | IGSM | 10 | |
Total power dissipation, TS 76 | Ptot | 200 | mW |
Storage temperature | Tstg | -55 ... 150 | |
Ambient temperature range | TA | -55 ... 150 | |
Channel temperature | Tch | 150 |