BF494

Transistors Bipolar (BJT) NPN/ 50V

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BF494 Picture
SeekIC No. : 00210758 Detail

BF494: Transistors Bipolar (BJT) NPN/ 50V

floor Price/Ceiling Price

Part Number:
BF494
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.03 A
DC Collector/Base Gain hfe Min : 65 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
DC Collector/Base Gain hfe Min : 65
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Bulk
Maximum DC Collector Current : 0.03 A


Features:

• Low current (max. 30 mA)
• Low voltage (max. 20 V).





Application

• HF applications in radio and television receivers
• FM tuners
• Low noise AM mixer-oscillators
• IF amplifiers in AM/FM receivers.





Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage


open emitter

-

30 V
VCEO collector-emitter voltage
open base

-

20 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) - 30 mA
ICM peak collector current - 30 mA
Ptot total power dissipation Tamb 25 ; note 1 - 300 mW
Tstg storage temperature −65 +150
Tj junction temperature - 150
Tamb operating ambient temperature −65 +150





Description

NPN medium frequency transistor BF494 in a TO-92; SOT54 plastic package.




Parameters:

Technical/Catalog InformationBF494
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)30mA
DC Current Gain (hFE) (Min) @ Ic, Vce67 @ 1mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Gain-
Power - Max350mW
Compression Point (P1dB)-
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BF494
BF494



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