Transistors Bipolar (BJT) NPN/ 50V
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.03 A | ||
DC Collector/Base Gain hfe Min : | 65 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO |
collector-base voltage |
open emitter |
- |
30 | V |
VCEO | collector-emitter voltage |
open base |
- |
20 | V |
VEBO | emitter-base voltage | open collector | - | 5 | V |
IC | collector current (DC) | - | 30 | mA | |
ICM | peak collector current | - | 30 | mA | |
Ptot | total power dissipation | Tamb 25 ; note 1 | - | 300 | mW |
Tstg | storage temperature | −65 | +150 | ||
Tj | junction temperature | - | 150 | ||
Tamb | operating ambient temperature | −65 | +150 |
Technical/Catalog Information | BF494 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | - |
Current - Collector (Ic) (Max) | 30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 67 @ 1mA, 10V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Gain | - |
Power - Max | 350mW |
Compression Point (P1dB) | - |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BF494 BF494 |