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BF485PN

Features: • High voltage (max. 350 V)• Low current (max. 200 mA)• High power dissipation (600 mW)• Two independently working transistors.Application• Complementary high-voltage configurations• Hook switch in telephone applications.Specifications SYMBOL PA...

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BF485PN: Features: • High voltage (max. 350 V)• Low current (max. 200 mA)• High power dissipation (600 mW)• Two independently working transistors.Application• Complementary high...

BF485PN Data Sheet

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Part Number:
BF485PN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High voltage (max. 350 V)
• Low current (max. 200 mA)
• High power dissipation (600 mW)
• Two independently working transistors.


Application

• Complementary high-voltage configurations
• Hook switch in telephone applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter − 350 V
VCEO collector-emitter voltage open base − 350 V
VEBO emitter-base voltage open collector − 6 V
IO output current (DC)   − 100 mA
ICM peak collector current   − 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 − 600 mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 150 °C
Tamb operating ambient temperature range   −65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C; note 1 − 300 mW
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.


Description

NPN/PNP transistors BF485PN in a SOT457 (SC-74) plastic package.




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