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BF422ZL1G

Transistors Bipolar (BJT) 500mA 250V NPN

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SeekIC No. : 00210008 Detail

BF422ZL1G: Transistors Bipolar (BJT) 500mA 250V NPN

BF422ZL1G Data Sheet

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Part Number:
BF422ZL1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 50 at 25 mA at 20 V Configuration : Single
Maximum Operating Frequency : 60 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 250 V
DC Collector/Base Gain hfe Min : 50 at 25 mA at 20 V
Maximum Operating Frequency : 60 MHz (Min)


Parameters:

Technical/Catalog InformationBF422ZL1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)50mA
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Frequency - Transition60MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Formed Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BF422ZL1G
BF422ZL1G



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