BF422

Transistors Bipolar (BJT) 500mA 250V NPN

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SeekIC No. : 00214626 Detail

BF422: Transistors Bipolar (BJT) 500mA 250V NPN

floor Price/Ceiling Price

Part Number:
BF422
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 50 at 25 mA at 20 V Configuration : Single
Maximum Operating Frequency : 60 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 250 V
DC Collector/Base Gain hfe Min : 50 at 25 mA at 20 V
Maximum Operating Frequency : 60 MHz (Min)


Features:

NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors.
As complementary types, the PNP transistors BF421 and BF423 are recommended





Pinout






Specifications

Symbol Value Unit
Collector-Base Voltage BF420BF422 VCBO
VCBO
300
250
V
V
Collector-Emitter Voltage BF422 VCEO 250 V
Collector-Emitter Voltage BF420 VCER 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 50 mA
Peak Collector Current ICM 100 mA
Power Dissipation at Tamb = 25 Ptot 8301) mW
Junction Temperature Tj 150
Storage Temperature Range TS 65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Symbol Value Unit
Collector-Base Voltage BF420BF422 VCBO
VCBO
300
250
V
V
Collector-Emitter Voltage BF422 VCEO 250 V
Collector-Emitter Voltage BF420 VCER 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 50 mA
Peak Collector Current ICM 100 mA
Power Dissipation at Tamb = 25 Ptot 8301) mW
Junction Temperature Tj 150
Storage Temperature Range TS 65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case




Parameters:

Technical/Catalog InformationBF422
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)50mA
Power - Max830mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 20V
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Frequency - Transition60MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BF422
BF422



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