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BF421,112: TRANS PNP 300V 50MA SOT54

BF421,112 Data Sheet

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Part Number:: BF421,112
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Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Series:	-	Manufacturer:	NXP Semiconductors
Transistor Type:	PNP	Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	300V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 30mA
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 25mA, 20V	Power - Max:	830mW
Frequency - Transition:	60MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92-3

Description

Series: -
Manufacturer: NXP Semiconductors
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Mounting Type: Through Hole
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 50mA
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 830mW

Parameters:

Technical/Catalog Information	BF421,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	50mA
Power - Max	830mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 25mA, 20V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 30mA
Frequency - Transition	60MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3
Packaging	Bulk
Drawing Number	568; SOT54; ; 5
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BF421,112 BF421,112

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