Transistors RF JFET N-Ch RF amplifier
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Configuration : | Single | Transistor Polarity : | N-Channel |
Gate-Source Cutoff Voltage : | - 0.5 V to - 8 V | Gate-Source Breakdown Voltage : | 30 V |
Maximum Drain Gate Voltage : | 30 V | Drain Current (Idss at Vgs=0) : | 6 mA to 15 mA |
Power Dissipation : | 350 mW | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Symbol | Parameter | Value | Units |
VDG | Drain-Gate Voltage | 30 | V |
VGS | Gate-Source Voltage | - 30 | V |
ID | Drain Current | 50 | mA |
IGF | Forward Gate Current | 10 | mA |
Tstg | Storage Temperature Range | -55 to +150 | °C |
Technical/Catalog Information | BF244B |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 30V |
Current Rating | 50mA |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BF244B BF244B |