BF244A

Resistance Drain-Source RDS (on) :
Drain Source Voltage VDS :
Gate-Source Cutoff Voltage :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum Drain Gate Voltage : 30 V
Power Dissipation : 350 mW
Drain Current (Idss at Vgs=0) : 2 mA to 6.5 mA
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Forward Transconductance gFS (Max / Min) : 0.003 S to 0.0065 S
Package / Case : TO-92S


Specifications

Symbol	Parameter	Value	Units
VDG	Drain-Gate Voltage	30	V
VGS	Gate-Source Voltage	- 30	V
ID	Drain Current	50	mA
IGF	Forward Gate Current	10	mA
Tstg	Storage Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired


Parameters:

Technical/Catalog Information	BF244A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	30V
Current Rating	50mA
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BF244A BF244A