BF2040R E6814

The BF2040R E6814 is a kind of silicon N-channel MOSFET tetrode which has two unique features:(1) for low noise,high gain controlled input stages up to 1 GHz;(2)operating voltage is 5 V.

There are some maximum ratings of BF2040R E6814 about it.(1):drain-source voltage(VDS) is 8 V;(2):continuous drain current(ID) is 20 mA;(3):gate 1/ gate 2-source current(±IG1/2SM) is 10 mA;(4):total power dissipation(TS is not higher than 76°C,Ptot) is 200 mW;(5):storage temperature(Tstg) is -55°C to 150°C;(7):channel temperature(Tch) is 150°C.

Otherwise,there are some DC characteristics of BF2040R E6814 at Ta is 25°C,unless otherwise specified.(1):drain-source breakdown voltage(V(BR)DS) is 10 V min when ID is 20 A, VG1S is 0 V,VG2S is 0 V;(2):gate1-source breakdown voltage(+V(BR)G1SS) is 6 V  min and 15 V max when +/G1S is 10 V ,VG2S is 0 V,and VDS is 0 V;(3):gate2-source breakdown voltage(+V(BR)G2SS) is 6 V min and 15 V max when ±/G2S is 10 mA, VG1S is equal to VDS which is 0 V;(4):gate1-source leakage current(+/G1SS) is 50 nA max when VG1S is 5 V, VG2S is 0;(5):gate2-source leakage current(+/G2SS) is 50 nA max when VG2S is 5 V, VG1S is 0, VDS is 0;(6):drain-source current(IDSX) is 15 mA typ when VDS is 5 V, VG2S is 4 V, RG1 is 100 k;(7):gate2-source pinch-off voltage(VG2S(p)) is 0.3 V min and 0.7 V typ when VDS is 5 V and ID is 20 A.