Transistors RF MOSFET Small Signal N-CH DUAL GATE 6V
BF1212,215: Transistors RF MOSFET Small Signal N-CH DUAL GATE 6V
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Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
US $.19 - .29 / Piece
Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
Configuration : | Single Dual Gate | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 6 V | Gate-Source Breakdown Voltage : | 6 V | ||
Continuous Drain Current : | 0.03 A | Power Dissipation : | 180 mW | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-4 | Packaging : | Reel |
Technical/Catalog Information | BF1212,215 |
Vendor | NXP Semiconductors (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel Dual Gate |
Voltage - Rated | 6V |
Current Rating | 30mA |
Package / Case | SOT-143, SOT-143B, TO-253AA |
Packaging | Cut Tape (CT) |
Drawing Number | 568; SOT143B; ; 4 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BF1212,215 BF1212,215 568 1962 1 ND 56819621ND 568-1962-1 |