BF1206

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : 6 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Configuration : Dual Dual Gate
Continuous Drain Current : 0.03 A
Package / Case : UMT-6
Drain-Source Breakdown Voltage : 6 V
Power Dissipation : 180 mW
Packaging : Reel - 7 in


Features:

· Two low noise gain controlled amplifiers in a single package
· Superior cross-modulation performance during AGC
· High forward transfer admittance
· High forward transfer admittance to input capacitance ratio


Application

· Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per MOS-FET; unless otherwise specified
VDS	drain-source voltage		-	6	V
ID	drain current (DC)		-	30	mA
IG1	gate 1 current		-	±10	mA
IG2	gate 2 current		-	±10	mA
Ptot	total power dissipation	Ts107; note 1	-	180	mW
Tstg	storage temperature		-65	+150
Tj	operating junction temperature		-	150

Note
1. T_s is the temperature at the soldering point of the source lead.


Description

The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.