BF1206

Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS

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BF1206 Picture
SeekIC No. : 00221002 Detail

BF1206: Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS

floor Price/Ceiling Price

Part Number:
BF1206
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Dual Dual Gate Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 6 V Gate-Source Breakdown Voltage : 6 V
Continuous Drain Current : 0.03 A Power Dissipation : 180 mW
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : UMT-6 Packaging : Reel - 7 in    

Description

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : 6 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Configuration : Dual Dual Gate
Continuous Drain Current : 0.03 A
Package / Case : UMT-6
Drain-Source Breakdown Voltage : 6 V
Power Dissipation : 180 mW
Packaging : Reel - 7 in


Features:

· Two low noise gain controlled amplifiers in a single package
· Superior cross-modulation performance during AGC
· High forward transfer admittance
· High forward transfer admittance to input capacitance ratio



Application

· Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners.


Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage   -
6
V
ID drain current (DC)   -
30
mA
IG1 gate 1 current   -
±10
mA
IG2 gate 2 current   -
±10
mA
Ptot total power dissipation Ts107; note 1 -
180
mW
Tstg storage temperature   -65
+150
Tj operating junction temperature   -
150
Note
1. Ts is the temperature at the soldering point of the source lead.



Description

The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.




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