Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS
BF1206: Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS
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Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
US $.19 - .29 / Piece
Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
Configuration : | Dual Dual Gate | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 6 V | Gate-Source Breakdown Voltage : | 6 V | ||
Continuous Drain Current : | 0.03 A | Power Dissipation : | 180 mW | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | UMT-6 | Packaging : | Reel - 7 in |
SYMBOL | PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
Per MOS-FET; unless otherwise specified | |||||
VDS | drain-source voltage | - |
6 |
V | |
ID | drain current (DC) | - |
30 |
mA | |
IG1 | gate 1 current | - |
±10 |
mA | |
IG2 | gate 2 current | - |
±10 |
mA | |
Ptot | total power dissipation | Ts107; note 1 | - |
180 |
mW |
Tstg | storage temperature | -65 |
+150 |
||
Tj | operating junction temperature | - |
150 |
The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package.