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BF1205C

Features: · Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias· Internal switch to save external components· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer a...

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SeekIC No. : 004299456 Detail

BF1205C: Features: · Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias· Internal switch to save external components· Superio...

BF1205C Data Sheet

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Part Number:
BF1205C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

 ·  Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias
 ·  Internal switch to save external components
 ·  Superior cross-modulation performance during AGC
 ·  High forward transfer admittance
 ·  High forward transfer admittance to input capacitance ratio


Application

 `  Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
   - digital and analog television tuners
   - professional communication equipment.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage   -
6
V
ID drain current (DC)   -
30
mA
IG1 gate 1 current   -
±10
mA
IG2 gate 2 current   -
±10
mA
Ptot total power dissipation Ts107; note 1 -
180
mW
Tstg storage temperature   -65
+150
Tj junction temperature   -
150
[1] Ts is the temperature at the soldering point of the source lead.


Description

The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b.

The source and substrate of BF1205C are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.




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