BF1203

Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to input capacitanceratio. Application· Gain controlled low noise amplifiers for VHF and UHF applications w...

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BF1203 Picture
SeekIC No. : 004299454 Detail

BF1203: Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to inpu...

floor Price/Ceiling Price

Part Number:
BF1203
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Two low noise gain controlled amplifiers in a single package
· Superior cross-modulation performance during AGC
· High forward transfer admittance
· High forward transfer admittance to input capacitance ratio.



Application

· Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.


Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
VDS drain-source voltage   -
10
V
ID drain current (DC)   -
30
mA
IG1 gate 1 current   -
±10
mA
IG2 gate 2 current   -
±10
mA
Ptot total power dissipation Ts102; note 1 -
200
mW
Tstg storage temperature   -65
+150
Tj operating junction temperature   -
150
Note
1. Ts is the temperature at the soldering point of the source lead.



Description

The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package.




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