Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to input capacitanceratio. Application· Gain controlled low noise amplifiers for VHF and UHF applications w...
BF1203: Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to inpu...
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US $.19 - .29 / Piece
Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
US $.19 - .29 / Piece
Transistors RF MOSFET Small Signal Dual N-Channel 10V 30mA 200mW
SYMBOL | PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
Per MOS-FET unless otherwise specified | |||||
VDS | drain-source voltage | - |
10 |
V | |
ID | drain current (DC) | - |
30 |
mA | |
IG1 | gate 1 current | - |
±10 |
mA | |
IG2 | gate 2 current | - |
±10 |
mA | |
Ptot | total power dissipation | Ts102; note 1 | - |
200 |
mW |
Tstg | storage temperature | -65 |
+150 |
||
Tj | operating junction temperature | - |
150 |
The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package.