Position: Home  > All Categories> Integrated Circuits (ICs) > BF1203

BF1203

Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to input capacitanceratio. Application· Gain controlled low noise amplifiers for VHF and UHF applications w...

product image

BF1203 Picture
See larger image
SeekIC No. : 004299454 Detail

BF1203: Features: · Two low noise gain controlled amplifiers in a single package· Superior cross-modulation performance during AGC· High forward transfer admittance· High forward transfer admittance to inpu...

BF1203 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BF1203
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Two low noise gain controlled amplifiers in a single package
· Superior cross-modulation performance during AGC
· High forward transfer admittance
· High forward transfer admittance to input capacitance ratio.


Application

· Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
VDS drain-source voltage   -
10
V
ID drain current (DC)   -
30
mA
IG1 gate 1 current   -
±10
mA
IG2 gate 2 current   -
±10
mA
Ptot total power dissipation Ts102; note 1 -
200
mW
Tstg storage temperature   -65
+150
Tj operating junction temperature   -
150
Note
1. Ts is the temperature at the soldering point of the source lead.


Description

The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Tools
TCP202
G084SN05 V.3
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Line Protection, Backups
BX0023
A20B-1008-0550
View more