Transistors RF MOSFET Small Signal N-CH DUAL GATE 7V
BF1101WR,115: Transistors RF MOSFET Small Signal N-CH DUAL GATE 7V
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Configuration : | Single Dual Gate | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 7 V | Gate-Source Breakdown Voltage : | 7 V | ||
Continuous Drain Current : | 0.03 A | Power Dissipation : | 200 mW | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | CMPAK-4 | Packaging : | Reel |
Technical/Catalog Information | BF1101WR,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 7V |
Current Rating | 30mA |
Package / Case | CMPAK-4 |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT343R; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BF1101WR,115 BF1101WR,115 |