Features: · For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA·fT = 8 GHz F = 1.2 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base v...
BEP183: Features: · For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA·fT = 8 GHz F = 1.2 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collect...
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· For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
· fT = 8 GHz
F = 1.2 dB at 900 MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
65 |
mA |
Base current |
IB |
5 | |
Total power dissipation1) TS 60°C |
Ptot |
250 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point2) |
RthJS |
295 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance