Features: · LOW COLLECTOR EMITTER SATURATION VOLTAGE· FAST-SWITCHING SPEEDApplication· GENERAL PURPOSE SWITCHING APPLICATIONS· GENERAL PURPOSE AMPLIFIERS· DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLASTSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage (I...
BDY90P: Features: · LOW COLLECTOR EMITTER SATURATION VOLTAGE· FAST-SWITCHING SPEEDApplication· GENERAL PURPOSE SWITCHING APPLICATIONS· GENERAL PURPOSE AMPLIFIERS· DC CURRENT AND BATTERY OPERATED ELECTRONIC ...
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Symbol | Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage (IE = 0) |
120 |
V |
VCEV | Collector-Emitter Voltage (VBE = -1.5V) |
120 |
V |
VCEO | Collector-Emitter Voltage (IB = 0) |
100 |
V |
VEBO | Emitter-Base Voltage (IC = 0) |
6 |
V |
IC | Collector Current |
10 |
A |
ICM | Collector Peak Current (repetitive) |
15 |
A |
IB | Base Current |
2 |
A |
Ptot | Total Dissipation at Tc 25 |
60 |
W |
Tstg | Storage Temperature |
-65 to 175 |
|
Tj | Max. Operating Junction Temperature |
150 |
The BDY90P is a silicon Multiepitaxial Planar NPN power transistor mounted in Jedec TO-220 plastic package. It is intented for use in switching, linear applications and emergency lighting.