BDX54B

Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 8 A
Package / Case : TO-220AB
Power Dissipation : 60 W


Application

* Power Darlington TR
* Complement to BDX53, BDX53A, BDX53B and BDX53C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BDX54 : BDX54A : BDX54B : BDX54C	- 45 - 60 - 80 - 100	V V V V
VCEO	Collector-Emitter Voltage	: BDX54 : BDX54A : BDX54B : BDX54C	- 45 - 60 - 80 - 100	V V V V
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current (DC)		-8	A
ICP	*Collector Current (Pulse)		-12	A
IB	Base Current		-0.2	A
PC	Collector Dissipation (TC =25)		60	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BDX54B
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDX54B BDX54B 497 5214 5 ND 49752145ND 497-5214-5