Transistors Darlington NPN Si Transistor Epitaxial
BDX53TU: Transistors Darlington NPN Si Transistor Epitaxial
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 45 V | Emitter- Base Voltage VEBO : | 5 V | ||
Collector- Base Voltage VCBO : | 45 V | Maximum DC Collector Current : | 8 A | ||
Maximum Collector Cut-off Current : | 200 uA | Power Dissipation : | 60 W | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Technical/Catalog Information | BDX53TU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 60W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 500A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BDX53TU BDX53TU |