BDX53BFP

Power Dissipation :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220FP
Maximum DC Collector Current : 8 A


Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
· FULLY MOLDED ISOLATED PACKAGE
· 2000 V DC ISOLATION(U.L. COMPLIANT)

Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE= 0))	80	V
VCEO	emitter-base voltage(IB = 0)	80	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IC	Collector and Emit ter Current	8	A
ICM	Collector Peak Current (repetitive)	12	A
IB	Base Current	0.2	A
Ptot	Total Dissipation at TC = 25 °C	29	W
Tstg	Storage Temperature	-65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.