BDX34D

Power Dissipation :
Packaging :
Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Package / Case : TO-220
Maximum Collector Cut-off Current : 1000 uA
Maximum DC Collector Current : 10 A


Features:

*Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and  BDX33D
*70 W at 25°C Case Temperature
*10 A Continuous Collector Current
*Minimum h_FE  of 750 at 3 V, 3 A



Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE  = 0)	BDX34 BDX34A BDX34B BDX34C BDX34D	VCBO	-45 -60 -80 -100 -120	V
Collector-emitter voltage (IB = 0)	BDX34 BDX34A BDX34B BDX34C BDX34D	VCEO	-45 -60 -80 -100 -120	V
Emitter-base voltage		VEBO	-5	V
Continuous collector current		IC	-10	A
Continuous base current		IB	-0.3	A
Continuous device dissipation at (or below) 25°C case temperature		Ptot	70	W
Continuous device dissipation at (or below) 25°C free air temperature		Ptot	2	W
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	-65 to +150	°C