BDX33D

Power Dissipation :
Packaging :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Package / Case : TO-220
Maximum Collector Cut-off Current : 1000 uA
Maximum DC Collector Current : 10 A


Features:

Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D
70 W at 25°C Case Temperature
10 A Continuous Collector Current
Minimum h_FE  of 750 at 3 V, 3 A



Specifications

Parameter	Symbol	Value	Units
Collector-Base Voltage                 BDX33                                                      BDX33A                                                      BDX33B                                                      BDX33C                                                      BDX33D	VCBO	45 60 80 100 120	V
Collector-Emitter Voltage              BDX33                                                      BDX33A                                                      BDX33B                                                      BDX33C                                                      BDX33D	VCEO	45 60 80 100 120	V
Emitter-Base Voltage	VEBO	5	V
Continuous collector current	IC	10	A
Continuous base current	IB	0.3	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)	Ptot	70	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)	Ptot	2	W
Operating free air temperature range	TA	-65 to +150
Operating junction temperature range	Tj	-65 to +150
Storage Temperature	TSTG	-65 to +150