Transistors Darlington NPN Si Transistor Epitaxial
BDX33CTU: Transistors Darlington NPN Si Transistor Epitaxial
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 100 V | Collector- Base Voltage VCBO : | 100 V |
Maximum DC Collector Current : | 10 A | Maximum Collector Cut-off Current : | 200 uA |
Power Dissipation : | 70 W | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
Technical/Catalog Information | BDX33CTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 4A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 500A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BDX33CTU BDX33CTU |