BDW93C

Emitter- Base Voltage VEBO :
Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 100 uA
Package / Case : TO-220AB
Maximum DC Collector Current : 12 A


Application

* Power Darlington TR
* Complement to BDW94, BDW94A, BDW94B and BDW94C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BDW93 : BDW93A : BDW93B : BDW93C	45 60 80 100	V V V V
VCEO	Collector-Emitter Voltage	: BDW93 : BDW93A : BDW93B : BDW93C	45 60 80 100	V V V V
IC	Collector Current (DC)		12	A
ICP	*Collector Current (Pulse)		15	A
IB	Base Current		0.2	A
PC	Collector Dissipation (TC =25)		80	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BDW93C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	12A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDW93C BDW93C 497 7180 5 ND 49771805ND 497-7180-5