BDW83D

Power Dissipation :
Packaging :
Transistor Polarity : NPN
Maximum Collector Cut-off Current : 500 uA
Mounting Style : SMD/SMT
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 120 V
Collector- Base Voltage VCBO : 120 V
Maximum DC Collector Current : 15 A
Package / Case : SOT-93


Features:

*Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C andBDW84D
*150 W at 25°C Case Temperature
*15 A Continuous Collector Current
*Minimum h_FE of 750 at 3 V, 6 A





Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE = 0)	BDW83 BDW83A BDW83B BDW83C BDW83D	VCBO	45 60 80 100 120	V
Collector-emitter voltage (IB = 0)	BDW83 BDW83A BDW83B BDW83C BDW83D	VCEO	45 60 80 100 120	V
Emitter-base voltage		VEBO	5	V
Continuous collector current		IC	8	A
Continuous base current		IB	0.3	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	150	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	3.5	W
Unclamped inductive load energy (see Note 4)		1/2LIC2	100	mJ
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	-65 to +150	°C