BDW64B

Power Dissipation :
Packaging :
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum DC Collector Current : 6 A


Features:

*Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and  BDW63D
*60 W at 25°C Case Temperature
*6 A Continuous Collector Current
*Minimum h_FE  of 750 at 3 V, 2 A



Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE  = 0)	BDW64 BDW64A BDW64B BDW64C BDW64D	VCBO	-45 -60 -80 -100 -120	V
Collector-emitter voltage (IB = 0)	BDW64 BDW64A BDW64B BDW64C BDW64D	VCEO	-45 -60 -80 -100 -120	V
Emitter-base voltage		VEBO	-5	V
Continuous collector current		IC	-6	A
Continuous base current		IB	-0.1	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	60	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	2	W
Unclamped inductive load energy (see Note 4)		1/2LIC2	50	mJ
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	-65 to +150	°C