Transistors Darlington 10A 100V Bipolar Power NPN
BDV65BG: Transistors Darlington 10A 100V Bipolar Power NPN
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 100 V | Emitter- Base Voltage VEBO : | 5 V |
Collector- Base Voltage VCBO : | 100 V | Maximum DC Collector Current : | 10 A |
Maximum Collector Cut-off Current : | 400 uA | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | SOT-93 |
Packaging : | Tube |
Technical/Catalog Information | BDV65BG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 125W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Through Hole |
Package / Case | TO-218 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BDV65BG BDV65BG |