Application·Designed for audio output stages and general purpose amplifier applicationsSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltageBDT65F BDT65AF BDT65BFBDT65CF 6080100120 V VCEO Collector to emitter voltageBDT65FBDT65AF BDT65BFBDT65CF 6080100120 V...
BDT65AF: Application·Designed for audio output stages and general purpose amplifier applicationsSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltageBDT65F BDT65AF BDT65BFBDT...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage BDT65F BDT65AF BDT65BF BDT65CF |
60 80 100 120 |
V |
VCEO | Collector to emitter voltage BDT65F BDT65AF BDT65BF BDT65CF |
60 80 100 120 |
V |
VEBO | Emitter to base voltage |
5 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 0.5 | A |
PC | Collector Power Dissipation @ TC=25 |
39 | W |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -65~175 |
The BDT65AF features are as follows:
·Collector Current -IC= 12A
·High DC Current Gain-hFE= 1000(Min)@ IC= 5A
·Complement to Type BDT64F/AF/BF/CF