BDT61B

Power Dissipation :
Packaging :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220


Features:

Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C
50 W at 25°C Case Temperature
4 A Continuous Collector Current
Minimum h_FE  of 750 at 1.5 V, 3 A



Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE  = 0)	BDT61 BDT61A BDT61B BDT61C	VCBO	60 80 100 120	V
Collector-emitter voltage (IB = 0)	BDT61 BDT61A BDT61B BDT61C	VCEO	60 80 100 120	V
Emitter-base voltage		VEBO	5	V
Continuous collector current		IC	4	A
Continuous base current		IB	0.1	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	50	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	2	W
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	-65 to +150	°C