Application·Designed for use in general purpose amplifer and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDT81FBDT83FBDT85FBDT87F 6080100120 V VCEO Collector-Emitter Voltage BDT81FBDT83FBDT85FBDT87F 6080100120 ...
BDT42CF: Application·Designed for use in general purpose amplifer and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDT81FBDT83FBDT85FBDT87...
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SYMBOL |
PARAMETER |
VALUE |
UNIT | |
VCBO |
Collector-Base Voltage | BDT81F BDT83F BDT85F BDT87F |
60 80 100 120 |
V |
VCEO |
Collector-Emitter Voltage | BDT81F BDT83F BDT85F BDT87F |
60 80 100 120 |
V |
VEBO |
Emitter-Base Voltage |
7 |
V | |
IC |
Collector Current-Continuous |
15 |
A | |
ICM |
Collector Current-Peak |
20 |
A | |
IB |
Base Current-Continuous |
4 |
A | |
PC |
Collector Power Dissipation TC=25 |
36 |
W | |
TJ |
Junction Temperature |
150 |
||
Tstg |
Storage Temperature Range |
-55~150 |
The BDT42CF features are as follows:
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF
-80V(Min)- BDT42BF; -100V(Min)- BDT42CF
·Complement to Type BDT41F/AF/BF/CF