Application·Designed for use in general purpose amplifer and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDT41FBDT41AFBDT41BFBDT41CF 80100120140 V VCEO Collector-EmitterVoltage BDT41FBDT41AFBDT41BFBDT41CF 40608...
BDT41F: Application·Designed for use in general purpose amplifer and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDT41FBDT41AFBDT41BFB...
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SYMBOL |
PARAMETER |
VALUE |
UNIT | |
VCBO |
Collector-Base Voltage |
BDT41F BDT41AF BDT41BF BDT41CF |
80 100 120 140 |
V |
VCEO |
Collector-Emitter Voltage |
BDT41F BDT41AF BDT41BF BDT41CF |
40 60 80 100 |
V |
VEBO |
Emitter-Base Voltage |
5 |
V | |
IC |
Collector Current-Continuous |
6 |
A | |
ICM |
Collector Current-Peak |
10 |
A | |
IB |
Base Current-Continuous |
3 |
A | |
PC |
Collector Power Dissipation @ TC=25 |
32 |
W | |
Tj |
Junction temperature |
150 |
||
Tstg |
Storage temperature |
-65~150 |
The BDT41F features are as follows:
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF
80V(Min)- BDT41BF; 100V(Min)- BDT41CF
·Complement to Type BDT42F/AF/BF/CF