Application·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applicationsSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltageBDT31FBDT31AFBDT31BFBDT31CFBDT31DF 80100120140160 V VCEO Collector to emitter v...
BDT31F: Application·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applicationsSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector ...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage BDT31F BDT31AF BDT31BF BDT31CF BDT31DF |
80 100 120 140 160 |
V |
VCEO | Collector to emitter voltage BDT31F BDT31AF BDT31BF BDT31CF BDT31DF |
40 60 80 100 120 |
V |
VEBO | Emitter to base voltage | 5 | V |
IC | Collector current | 3 | A |
ICM | Collector current (pulse) | 5 | A |
IB | Base current | 1 | A |
PC | Collector dissipationTC = 25 | 22 | W |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -65 to +150 |
The BDT31F features are as follows:
·DC Current Gain -hFE = 25(Min)@ IC= 1.0A
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF
·Complement to Type BDT32F/AF/BF/CF/DF