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BDP31

Features: * High current (max. 3 A)* Low voltage (max. 45 V).Application* General purpose medium power applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 70 V VCEO collector-emitter voltage open base - 45...

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BDP31: Features: * High current (max. 3 A)* Low voltage (max. 45 V).Application* General purpose medium power applications.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...

BDP31 Data Sheet

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Part Number:
BDP31
Supply Ability:
5000

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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

* High current (max. 3 A)
* Low voltage (max. 45 V).


Application

* General purpose medium power applications.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 70 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC)   - 3 mA
ICM peak collector current   - 6 A
IBM peak base current   - 0.5 A
Ptot total power dissipation Tmb 25 °C; note 1 - 1.35 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

NPN medium power transistor BDP31 in a SOT223 plastic package. PNP complement: BDP32.


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