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BDL31

Features: * High current (max. 5 A)* Low voltage (max. 10 V)* Low collector-emitter saturation voltage ensures reduced power consumption.Application* Battery powered units where high current and low power consumption are important.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX....

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BDL31: Features: * High current (max. 5 A)* Low voltage (max. 10 V)* Low collector-emitter saturation voltage ensures reduced power consumption.Application* Battery powered units where high current and low...

BDL31 Data Sheet

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Part Number:
BDL31
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* High current (max. 5 A)
* Low voltage (max. 10 V)
* Low collector-emitter saturation voltage ensures reduced power consumption.


Application

* Battery powered units where high current and low power consumption are important.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 10 V
VEBO emitter-base voltage open collector - 6 V
IC collector current (DC)   - 5 mA
ICM peak collector current   - 10 A
IBM peak base current   - 1 A
Ptot total power dissipation Tamb  25 °C - 1.35 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

NPN BISS (Breakthrough In Small Signal) transistor BDL31 in a SOT223 plastic package. PNP complement: BDL32.


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