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BD830

Features: * High current (max. 1 A)* Low voltage (max. 80 V).Application* General purpose* Driver stages in hi-fi amplifiers and television circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -100 V VCEO collecto...

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SeekIC No. : 004299061 Detail

BD830: Features: * High current (max. 1 A)* Low voltage (max. 80 V).Application* General purpose* Driver stages in hi-fi amplifiers and television circuits.PinoutSpecifications SYMBOL PARAMETER COND...

BD830 Data Sheet

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Part Number:
BD830
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* High current (max. 1 A)
* Low voltage (max. 80 V).


Application

* General purpose
* Driver stages in hi-fi amplifiers and television circuits.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -100 V
VCEO collector-emitter voltage open base - -80 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -1 A
ICM peak collector current   - -1.5 A
IBM peak base current   - -500 mA
Ptot total power dissipation Tamb 25 °C - 2 W
Tmb 50°C - 8 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150



Description

PNP power transistor BD830 in a TO-202; SOT128B plastic package. NPN complement: BD829.


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