BD810G, US $ .32-.65 , ON Semiconductor, BD810G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00204037 Detail

BD810G: Transistors Bipolar (BJT) 10A 80V 90W PNP

BD810G Data Sheet

US $ .32~.65 / Piece | Get Latest Price

Part Number:: BD810G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Transistors Bipolar (BJT) 10A 80V 90W PNP
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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	30	Configuration :	Single
Maximum Operating Frequency :	1.5 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 30
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 1.5 MHz (Min)

Parameters:

Technical/Catalog Information	BD810G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	90W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Frequency - Transition	10.5MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD810G BD810G

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BD810G

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