Transistors Bipolar (BJT) 10A 80V 90W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Frequency : | 1.5 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Rating | Symbol |
Value |
Unit |
CollectorEmitter Voltage | VCEO |
80 |
Vdc |
CollectorBase Voltage | VCBO |
80 |
Vdc |
Emitter-Base Voltage | VEBO |
5.0 |
Vdc |
Collector Current | IC |
10 |
Adc |
Base Current | IB |
6.0 |
Adc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
90 720 |
Watt mW/ |
Operating and Storage Junction Temperarture Range |
TJ,TSTG |
55 to +150 |
The BD800 feature is:
* DC Current Gain -hFE = 30 (Min) @ IC = 2.0 Adc