BD809

Transistors Bipolar (BJT) 10A 80V 90W NPN

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SeekIC No. : 00214041 Detail

BD809: Transistors Bipolar (BJT) 10A 80V 90W NPN

floor Price/Ceiling Price

Part Number:
BD809
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/8

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 1.5 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 30
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 1.5 MHz (Min)


Specifications

Rating Symbol
Value
Unit
CollectorEmitter Voltage VCEO
80
Vdc
CollectorBase Voltage VCBO
80
Vdc
Emitter-Base Voltage VEBO
5.0
Vdc
Collector Current IC
10
Adc
Base Current IB

6.0

Adc

Total Device Dissipation @ TC = 25
Derate above 25
PD
90
720
Watt
mW/
Operating and Storage Junction
Temperarture Range
TJ,TSTG
55 to +150





Description

The BD800 feature is:

 * DC Current Gain -hFE = 30 (Min) @ IC = 2.0 Adc




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